Calculation of the electronic properties of pseudo-binary semiconductor alloys

Abstract

A coherent-potential approximation calculation is presented for the concentration variation of the pseudo-binary semiconductor alloy band structures and scattering rates. The procedure yields accurate results that compare favorably with experiments for ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$, $\mathrm{Ga}{\mathrm{P}}_{x}{\mathrm{As}}_{1\ensuremath{-}x}$, and ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{P}$. A theory for the scattering energy in the Brooks mobility formula is also given.