Abstract
We have calculated the surface peak intensity of GaAs and InP in high-energy ion scattering by the Monte Carlo simulation method, assuming a variety of surface dynamics. Effects of thermal vibration, displacements of surface atoms, disorder of surface layer and the effect of multiple scattering of the projectile in penetrating deposited films have been evaluated in the megaelectron-volt range of the He+ ion incident energy. The present study describes an attempt to carry out a comprehensive calculation of the surface peak for the surface and interface of insulator/III–V compound semiconductor systems. From these analyses, we can directly evaluate the amount of disorder at the surface and the interface of insulator/III–V compound semiconductor systems.
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