Abstract
The surface peak intensity from a silicon crystal has been calculated by the Monte Carlo simulation method assuming a variety of surface structure models and dynamics. Effects of thermal vibration, displacements and relaxation of surface atoms, and also the shadowing effect by adsorbed layers and the effect of multiple scattering of the projectile in penetrating surface layers have been evaluated in the He + ion incident energy range from 0.1 to 2.0 MeV. Since many real surfaces of crystals are covered with adsorbed (deposited) layers or otherwise reconstructed when they are clean, it is of practical usefulness to obtain the calculation results about such surfaces in order to apply the MeV ion scattering technique for surface analyses. The results show the sensitivity and limits of this technique.
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