Abstract
Abstract The Bethe theory of electron diffraction is used to calculate reflection electron diffraction intensities for medium and high energy electrons. A generalized Hill's determinant method is used for the numerical calculations instead of the more common but slower matrix-eigenvalue technique. Results of a "systematics" calculation of the specular intensity as a function of incident angle are compared with some experimental values for the Si (111) surface. The application of the Bethe theory to crystals where the surface structure differs from the bulk is also considered.
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