Abstract
Native defect concentrations in GaAs grown by organometallic vapor-phase epitaxy (OMVPE) are calculated. The most dominant defect is the Ga antisite (Ga As) or the AS antisite (As Ga). The input Ga pressure is assumed to be 5×10 -5 atm. At 600°C, the As Ga concentration is larger than that of Ga As when the V/III ratio of the input gas pressures is larger than 1.6. For a fixed V/III ratio, Ga AS becomes more dominant as the temperature is increased. The calculated defect concentrations are comparable to the residual donor and acceptor concentrations in OMVPE GaAs, and thus the electrical properties of OMVPE GaAs could be influenced by the native defects.
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