Abstract
The article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emitting p-n junction for a light-emitting transistor based on p-InGaN – n-AlGaN heterostructure have been investigated.
Highlights
LEDs and emitters based on quantum dots are not yet capable of high-speed performance due to design features
The emitting region consists of an In0.06Ga0.94N layer 50 nm thick and two Al0.15Ga0.85N layers 0.15 μm thick
In the first stage, when 3.3 V is applied to the p-region of the device, forward bias reduces the height of potential barrier between n-type and p-type regions
Summary
LEDs and emitters based on quantum dots are not yet capable of high-speed performance due to design features. 2 Calculation of light transistor structural parameters based on heterostructure p-In0.06Ga0.94N – n-Al0.15Ga0.85N The structure chosen for simulation is a bipolar light-emitting transistor based on p-InGaN n-AlGaN, containing a quantum well between the base and the emitter [5].
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