Abstract
In this study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (II) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current–voltage ( I– V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density ( N ss ) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I– V characteristics range from 2.15 × 10 13 cm −2 eV −1 at ( E c − 0.66) eV to 5.56 × 10 12 cm −2 eV −1 at ( E c − 0.84) eV.
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