Abstract
Large single crystals of CdSe weighing about 30g were grown by the vertical unseeded vapor growth technique at a linear growth rate of 5mm/day and a temperature gradient of 10°C/cm. Crystal perfection and homogeneity were evaluated by Laue X-ray diffraction, etch pit density, SEM and microprobe analysis methods. The dark resistivity of the as-grown and the heat treated crystal was about 1?cm and 1012?cm respectively. Slices were used to fabricate room temperature detectors for nuclear radiation energy. The detectors showed high efficiency and stability as a function of time for radiation sources from 1OKeV to 66OKeV.
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