Abstract
CeO_2 abrasive grain is known as a good polishing agent for glass materials and has been used so much. However, the price of CeO_2 has increased to 10 or more times in recent several years. So it is desired that alternative material of CeO_2 abrasive grain. To develop the alternative material, the glass polishing mechanism by CeO^2 abrasive grain needs to be figured out. In this report, the structural analysis of the surface of abrasive grains before/after polishing is studied to figure out the mechanism of glass polishing by CeO_2 abrasive grain. The results of STEM-EDS and XPS measurements revealed the adherence of silicon oxides on the surface of CeO_2 abrasive grain after polishing. Even though silicon oxides may also adhere on other abrasive grains, the amount of the adherence was far less than that on CeO_2 abrasive grain. Considering the high adherence amount, it is supposed that Si oxide probably adheres on CeO_2 with chemical bonds.
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