Abstract
Multilevel storage and resistance drift are two challenges in phase-change memories. Here, we report that [C(5 nm)/Sb2Te3(12 nm)]5 phase-change heterostructure film has multilevel phase change properties and low resistance drift. The addition of carbon broke the Sb2Te3 bond and formed new C-Sb and C-Te bonds. The reliability of phase-change heterostructure was demonstrated by transmission electron microscopy. The amorphous resistance drift index of C/Sb2Te3 film was reduced effectively which may be caused by the structure relaxation. In addition, PCM devices based on C/Sb2Te3 phase-change heterostructure films also confirmed the potential of multilevel storage. This research provided a new method to realize multilevel phase-change memories with low resistance drift.
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