Abstract
Structural damage enhanced near-infrared electroluminescence (EL) of a metal-oxide-semiconductor light emitting diode (MOSLED) made on SiOx film with buried nanocrystallite Si after CO2 laser rapid thermal annealing (RTA) at an optimized intensity of 6kW∕cm2 for 1ms is demonstrated. CO2 laser RTA induced oxygen-related defects are capable of improving Fowler-Nordheim tunneling mechanism of carriers at metal/SiOx interface. The CO2 laser RTA SiOx film reduces Fowler-Nordheim tunneling threshold to 1.8MV∕cm, facilitating an enhanced EL power of an indium tin oxide/SiOx∕p-Si∕Al MOSLED up to 50nW at a current density of 2.3mA∕cm2.
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