Abstract
The c-axis microbridge (CAM) junction technology has an inherently low inductance due to its groundplaned geometry which should be well suited to SFQ logic applications. However, the critical currents of the conventional (2 /spl mu/m diameter) CAM technology are too high. Experiments with optical lithography have shown that junctions of /spl sim/0.5 micron dimension are required. A new process using electron beam lithography has been developed. The junction statistics even at this early stage of development look promising. To confirm the validity of the rest of the design and fabrication technology a CAM based RS Flip-Flop has been fabricated which shows the correct traversal of the state graph at 45 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
