Abstract
The burn-in effect in GaInP/GaAs HBTs has been associated to processes involving hydrogen contained in the GaAs carbon doped base region of this transistor. Looking for a better understanding of this effect we have realised a detailed study of the evolution of the charge transport properties during the burn-in effect and during the step by step thermal restoration to its initial condition. Our results indicate that hydrogen processes taking place in the emitter-base space charge region and in the neutral emitter region are the main mechanisms of the burn-in. Finally, solutions for reducing this burn-in effect are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
