Abstract
The burn-in effect in GaInP/GaAs HBTs has been associated to processes involving hydrogen contained in the GaAs carbon doped base region of this transistor. Looking for a better understanding of this effect we have realised a detailed study of the evolution of the charge transport properties during the burn-in effect and during the step by step thermal restoration to its initial condition. Our results indicate that hydrogen processes taking place in the emitter-base space charge region and in the neutral emitter region are the main mechanisms of the burn-in. Finally, solutions for reducing this burn-in effect are discussed.
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