Abstract
ABSTRACTSilicon (001) substrates were implaynted with 350 keV Co at room temperature and 450°C with fluence of from l×l017 Co/cm2 to 6×1017 Co/cm . All samples were annealed at 1000°C in order to form the CoSi2 phase Concentration profiles were determined with Rutherford backscattering spectrometry (RBS), and the associated strain profiles were analyzed with double-crystal X-ray rocking curve measurements. Ion channeling was also used to characterize the silicide formation and crystal quality. An implantation of 6×1017 Co/cm2 at 450°C forms a single-crystal CoSi2 layer while lower fluences do not. A continuous, buried CoSi2 single-crystal layer is formed for the 3×1017 Co/cm2 sample implanted at 450°C and annealed at 1000°C. The continous CoSi2 layer is thicker than the critical layer thickness for a fully coherent film, and therefore the layer partially relaxes. A relaxation of 50% of the fully coherent value is observed for this buried silicide system.
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