Abstract
We demonstrate a novel buried oxide-grating structure formed by selectively oxidized Al/sub x/Ga/sub 1-x/As grown on nonplanar substrates using low-pressure metal-organic chemical vapor deposition (MOCVD) for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor-distributed-feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum.
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