Abstract
Abstract Results are presented for deep implantation of nitrogen into n-type GaAs. The main purpose of these investigations is to clarify whether deep implantation can be a suitable process to create buried, selectively etchable layers for the fabrication of micromechanical structures in GaAs. The implanted layers have been characterized by XPS sputter profiling and electrical measurements using test Schottky diodes as well as selected etching techniques. XPS depth profiling shows the formation of a GaAs1-x N y layer with y 5%. The current/voltage characteristics show that implantation damage recovers to a certain extend after annealing at a temperature of 750°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
