Buried interface modification toward efficient perovskite solar cell based on PVK hole transport layer

Abstract

Poly (9-vinylcarbazole) (PVK) is an attractive hole transport material for organometallic-halide perovskite solar cell (PSC) because of its excellent hole transport ability and great film-forming property. Nowadays, the PVK hole-transport-layer (HTL) based PSC suffered from low power conversion efficiency (PCE), which mainly caused by bad interface contact between PVK and perovskite film, including the energy level mismatch. Doing PVK is an effective and facial method to modify the buried interface of perovskite film. In this work, 1,1-bis [(di-4-tolylamino)phenyl]cyclohexane (TAPC) was added into PVK HTL. Experimental results show that a highest occupied molecular orbital (HOMO) level elevation was achieved after doping TAPC. Meanwhile perovskite films with increased crystallinity, reduced defect density and enhanced light absorbance were obtained. Finally, the PCE of PSCs were enhanced from 10.81% of the control device to 15.65% of PVK+40% TAPC device. The reason that responsible for the energy level lifting, morphology improvement and performance enhancement were thoroughly investigated and analyzed. This work provides an alternative option for the dopant in PVK to improve the buried interface of perovskite film, and therefore, the performance of PSCs.