Abstract
Herein, the fabrication of InP photonic‐crystal surface‐emitting lasers (PCSELs) using a buried airhole/InP photonic‐crystal (PC) layer based on an epitaxial regrowth process is reported. The formation of PC voids in the InP crystal structure requires a precise tuning of the metal‐organic vapor‐phase epitaxy (MOVPE) growth parameters, where the regrowth evolution is a function of temperature, V/III ratio, and growth rate. With precise control of these parameters, it is possible to alter the airhole shape from complete infilling to perfect encapsulation. Low‐threshold lasing is demonstrated from these encapsulated airhole regrown PCSELs using optical pumping.
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