Abstract
Ultra low on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed. A submicron buried p+ gate structure was fabricated by the combination of submicron trench dry etching and epitaxial growth on a trench structure. A drain current IDS reached 8 A at a drain voltage VDS = 1 V, corresponding to a specific on-resistance RonS of 1.1 mOmegamiddotcm2 at a current density JD = 200 A/cm2, in the BGSIT with the channel width Wch of 0.9 mum. A breakdown voltage VBR was ~700 V at a negative gate bias VG = -12 V. A clear saturation IDS-VDS characteristic and slightly high RonS (1.4 mOmegamiddotcm2) were observed in the BGSIT with narrow Wch of 0.7 mum. RonS increased in proportion to T2,3 in any channel width due to enhanced phonon scattering.
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