Abstract
Abstract High-resolution Ce 3d–4f resonance photoemission (RPES) spectra highly reflecting bulk 4f states have been measured for a Kondo semiconductor CeNiSn and its reference material CePdSn. An intensity of f 0 final states is markedly weaker for CeNiSn than for CePdSn. We also report on photon-energy dependence of the RPES spectra. Comparison between the RPES spectra of CeNiSn and La 3d–4f RPES spectra of LaNiSn shows that the rare-earth 5d enhancement is significantly weaker than Ce 4f resonance enhancement. The high-resolution 3d–4f RPES spectra clarify the difference of the bulk electronic states near the Fermi level between CeNiSn and CePdSn.
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