Abstract
An analytical model for bulk recombination in the neutral base region is presented. This model takes into account the effects of the spike (that appears in the emitter–base interface of abrupt HBTs) on the injection of electrons from the emitter into the base, and the effects of the electron saturation velocity on the electron transport through the neutral base. The model is formulated in terms of an effective electron velocity through the spike and an effective electron velocity through the neutral base region. This model is applied to InP/InGaAs abrupt HBTs, a kind of device in which the base current is dominated by recombination in the neutral base region. The results obtained from this model are in good agreement with numerical and experimental results. Finally, as an application, the model is used to estimate the effective electron velocity through the spike from collector current data, and the recombination coefficients in the neutral base region from current gain values.
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