Abstract
In this paper we have presented the non-uniformly doped bulk Junction less transistor (JLT) and investigated bulk-JLT and SOI-JLT with non-uniform doping in terms of its electrical performance parameters and short channel effects (SCEs) parameters comparatively. Effective thickness of channel depends on non-uniform doping distribution parameters and this affects the performance of bulk-JLT notably, however it is not so in case of SOI-JLT. The effect of non-uniform doping on electrical characteristics of JLTs (bulk and SOI) in terms of Subthreshold Slope (SS), ON-current, OFF-Current and ON/OFF current ratio has been investigated, and the non-uniformly doped bulk-JLT exhibits high ON/OFF ratio (109 for 20 nm Gate Length). Moreover, the non-uniformly doped bulk-JLT also shows improved short-channel effects (SCEs) parameters (such as Drain Induced Barrier Lowering, Threshold Voltage variations etc.) compared to SOI-JLT. Lastly, the effect of standard deviation, dielectric constant, substrate doping, and well biasing on the device performance are examined to further improve the performance of bulk-JLT independently.
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