Abstract
Multiple quantum well (MQW) photodiodes based on the InGaAs/GaAsSb material system are emerging as viable candidates for mid infrared detection. A critical issue for these devices is dark current caused by defects within the material. In this work, low frequency noise spectroscopy and random telegraph signal characterization were used to characterize defect levels in MQW photodiodes. Three traps, located at 0.14 eV (Ea), 0.34 eV (Eb), and 0.43 eV (Ec), were identified from the measured noise. Ea is associated with bulk InGaAs, Eb may be associated with bulk GaAsSb, and Ec is localized at the InGaAs/GaAsSb heterointerface.
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