Abstract
The thermal equilibrium distributions of carriers, space charge density and electric field in semi-insulating GaAs adjacent to heavily doped GaAs is analyzed in detail and analytic approximations to these distributions are described. The semi-insulation GaAs is assumed to contain deep donors of the EL2 type and a much smaller concentration of shallow acceptors. The extension of the negative built-in space charge layers adjacent to an n + contact is of the order of the Debye length based on the acceptor concentration rather than on the free electron concentration. The main portion of the positive space charge layer adjacent to a p + contact is independent of the EL2 and acceptor concentrations, the space charge density decreasing inversely with the square of the distance from the contact.
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