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Abstract
Theoretical estimates are given concerning the formation energy of broken bond centers with deep electron levels in Si and Ge. The underlying model is briefly sketched. Results are given for the energy difference between saturated bond and broken bond variants of the 90°- partial dislocations in Si and Ge which confirm that in Si the saturated bond configuration is the stable one but indicate that in Ge both configurations may have rather similar formation energies. In addition results are presented for the formation energies of unrelaxed vacancies in Si and Ge and of reconstruction defects on 30°- and 90°- partial dislocations.
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