Abstract

The paper presents a two stage low noise amplifier (LNA) design in GaAs monolithic microwave integrated circuit (MMIC) technology working in the millimeter wave domain. The aim of this paper was to design a LNA with gain of 20 dB and a noise figure of maximum 3 dB. The use of the S parameter that characterizes the FET offers us the needed information for LNA design. Microstrip lines and some lumped elements are used as elements of all input and output matching networks. In the end the LNA was simulated and the results have demonstrated that the LNA has a gain over 20 dB and a noise figure around 3 dB over the 20-40 GHz band.

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