Abstract
In this letter, we report the five-period quantum-dot infrared photodetectors (QDIPs) with a bi-stacked quantum-dot (QD) structure for a wide and relatively flat detection response ranging from 4 to 11 μm with high responsivities. The bi-stacked QD structure consists of a standard InAs QD and an InGaAs-capped InAs QD layer separated by a 50-nm GaAs barrier layer. The device exhibits a wide detection window in the range of 4-11 μm with high responsivities, which suggests that similar responsivities can be obtained for the standard QD and the InGaAs-capped QD layers in the mid-wavelength (MWIR) and long-wavelength (LWIR) infrared ranges, respectively. The results are advantageous for the development of broadband QDIPs covering MWIR and LWIR ranges based on the stacked QD structures.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
