Abstract
A broadband, compact on-chip contact pad to microstrip transition for use in silicon (Si) based technologies operating up to 330 GHz has been investigated and fabricated. The pad is designed as a short coplanar waveguide structure to concentrate the electrical field in the narrow gap between signal and ground pads, thus eliminating the need for a substrate shield while preserving low interaction with the lossy silicon substrate. The working principle is confirmed by electromagnetic field simulations using a detailed model of a high-frequency measurement probe, which allows to investigate the field distribution with a realistic excitation source. The fabricated test structure with two transitions in a back-to-back configuration shows excellent broadband properties and insertion loss below 4.2 dB up to 330 GHz, making the proposed structure well suited for millimetre-wave applications.
Published Version
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