Abstract
In this paper, a new broadband low noise amplifier (LNA) is proposed. The LNA utilizes a composite NMOS/PMOS cross-coupled transistor pair and a difference amplifier to in-crease the linearity while reducing the noise figure. The introduced approach provides partial cancellation of distortion and noise generated by the input transistors, hence, degrading the overall distortion. The LNA is implemented by using the UMC 130 nm CMOS technology node. The post simulation shows that a conversion gain equals 16.2 dB across 0.05–3.1 GHz frequency range, an IIP3 is +9.2 dBm, and minimum and maximum noise figure are 1.4 dB and 2 dB, respectively. The LNA consumes 32.4mW from 1.8 V supply and occupies an area of 0.075 mm2.
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