A 2–1100 MHz wideband low noise amplifier with 1.43 dB minimum noise figure

Abstract

A new wideband low noise amplifier (LNA) is proposed in this paper. The LNA utilizes a composite NMOS/PMOS cross-coupled transistor pair to increase the amplification while reducing the noise figure. The introduced approach provides partial cancellation of noise generated by the input transistors, hence, lowering the overall noise figure. An implemented prototype using IBM 90 nm CMOS technology shows a measured conversion gain of 20 dB across 2–1100 MHz frequency range, an IIP3 of −1.5 dBm at 100 MHz, and minimum and maximum noise figure of 1.43 dB and 1.9 dB from 100 MHz to 1.1 GHz. The LNA consumes 18 mW from 1.8 V supply and occupies an area of 0.06 mm2.