Abstract
A broadband millimeter-wave (mmWave) power amplifier (PA) was implemented using a modified 2D distributed power combining technique. The proposed power combining was based on a single-ended dual-fed distributed combining (SEDFDC) design technique using zero-phase shifting (ZPS) transmission lines. To improve the input/output power distribution of each power cell within a wide frequency range, N/2-way power dividers/combiners were inserted into the distributed combining structure. Modified ZPS lines also simplified the combining structure and curbed phase variation according to the frequency. These modifications enabled power combining cells to increase without degrading the power bandwidth. The proposed PA was fabricated with a commercial 0.15 μm GaAs pseudo high electron-mobility transistor (pHEMT) monolithic microwave-integrated circuit (MMIC) process. It exhibited 20.3 to 24.2 dBm output power (Pout), 12.9 to 21.8 dB power gain, and 5.2% to 12.7% power-added efficiency (PAE) between 26 and 56 GHz.
Highlights
The commercialization of 5G communication has extended the carrier frequency to the millimeter wave band and requires a radio frequency (RF) beamforming system consisting of array antennas and transceiver chains
Electronics 2020, 9, 899 distributed combining (SEDFDC) designs with zero-phase shifting (ZPS) transmission lines have been proposed for millimeter-wave complementary metal-oxide- semiconductor (CMOS) power amplifier (PA) as shown in Figure 2a [4,5]
The measured S-parameter is shown in Figure 9, and the total current was 575 mA
Summary
The commercialization of 5G communication has extended the carrier frequency to the millimeter wave band and requires a radio frequency (RF) beamforming system consisting of array antennas and transceiver chains. 5G communication requires PAs that can operate at various millimeter-wave frequencies such as 28, 39, and 47 GHz [2]. Electronics 2020, 9, 899 distributed combining (SEDFDC) designs with zero-phase shifting (ZPS) transmission lines have been proposed for millimeter-wave CMOS PAs as shown in Figure 2a [4,5]. Dual-fed distributed amplifiers (DAs) have been reported to enhance radiated gain and power at the leaky-wave antenna [6,7]. Ka- and Q-bands to the V-band (26–56 GHz)
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