Abstract

This paper presents a power amplifier (PA) Monolithic Microwave Integrated Circuit (MMIC) based on GaN High Electron Mobility Transistor (HEMT) at 110 GHz. A parallel cascade class AB power amplifier is used in order to increase linearity and efficiency. This single-ended three-stage power amplifier provides 19.6dBm output power (Pout) with large signal gain of 7.6dB and power added efficiency (PAE) of 5.7% at 110GHz. The proposed power amplifier exhibits output power of 18.7dBm at 1dB compression point (P 1dB ).

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