Broadband Microwave Field-Effect Transistor Amplifiers

Abstract

With the recent advent of transistors which are capable of operating in the microwave frequencies, both bipolar and field-effect transistors are used to replace other microwave amplifiers. In this paper, the broadband design theory and some experimental results of microwave field-effect transistor (FET) amplifiers are presented. The basic elements used in these broadband amplifiers are microwave silicon and gallium-arsenide Schottky-barrier field-effect transistors. Analytical broadband matching techniques are used together with computer-aided optimization techniques in the design of these broadband microwave FET amplifiers.