Abstract
The authors demonstrated broadband low reflectance through a two-step surface texturing technique that combines nanosphere lithography with dry-etching. Through this, various stepped-cone nanostructures were fabricated on the surface of GaAs to suppress its reflectance, with the shape and height of these nanostructures being precisely controlled by altering the diameter of the etch mask (SiO2 nanospheres) and the etching time. The effects of this stepped-cone nanostructure were analyzed by measuring its reflectance spectra in conjunction with finite-difference time-domain calculations. This found that the average reflectance at wavelengths of 300–2500 nm is reduced from 38.1% to 2.6% due to enhanced light scattering and a gradual change in refractive index. This novel method is therefore considered to represent an easily scalable approach to fabricating broadband antireflective surfaces for solar cell applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
