Abstract
In this article, a broadband gallium-nitride-based light-emitting diode with a one-dimensional photonic crystal layer is investigated. The broadband light-emitting diode using the proposed backside reflector has high reflectance (>95%) over a 270-nm bandwidth in visible light at an arbitrary incidence angle. A broadband light-emitting diode of high output power due to the high reflectivity is achieved. Also reported are the results for light-emitting diodes by the transistor outline can (TO-can) package. The proposed light-emitting diodes possess broadband high reflected spectra, high output power for light extraction, and a good view angle.
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