Abstract
The design and simulation of a Ka-band power amplifier Monolithic microwave integrated circuits (MMIC) utilizing 0.15μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The power amplifier MMIC is three-stage design utilizing a total gate width of 1.6mm in the output stage. The staging ratio of the whole MMIC corresponds to 1:1.5:5 to achieve higher power added efficiency and output power. Output matching network is carefully designed to achieve broadband. The simulation demonstrates for the design 34-35.6dBm of output power with 22%-26% power added efficiency (PAE) between 26-32GHz. The dimensions of the design are 4×1.7mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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