Abstract

Here, we report a broadband graphene-silicon field-effect coupled detector (FCD) sensitive to photons spanning from soft X-ray to Near-Infrared region. Unlike traditional charge-coupled devices (CCD) relying on serial charge transfer between potential wells, the FCD integrates photo-sensing, charge integration, field-effect amplification, and random readout in one pixel. The charge integration in the potential well of the semiconductor substrate and field-effect coupled amplification in graphene transistor result in a highly sensitive broadband response. In the X-ray region, the device displays a high sensitivity of 1088 CGy <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">air</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> and a fast response time < ~5 ms. Linear array imaging reveals the potential of our devices for array-based broadband imaging. Our FCD offers a viable strategy to monolithically integrate 2D materials into conventional solid-state imaging technology, exploring the next-generation broadband photodetectors for high-quality imaging and super vision technology.

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