Abstract
Broad-band extreme ultraviolet (13∼40nm) lithography (EUVL) has been examined. Exposure intensity at the broad-band of 13∼40nm was 20 times larger than at the conventional narrow-band of 13nm. Moreover, broad-band EUVL with a wet-silylated and dry-developed resist process has been investigated in order to obtain a high resolution of 0.1μm with high-aspect-ratio. Imaging experiments were performed using 32:1 reduction Schwarzschild optics illuminated with a synchrotron radiation light source from SORTEC ring. The exposure was done through a 0.1μm-thick SiN vacuum window, MoSi multilayer coated optics and without a Be filter. Silylation characterization and determination of optimum composition of the silylation solution have been performed using Fourier transform infrared spectroscopy (FTIR). Using broad band EUVL with the optimal wet-silylated and dry-developed resist, 0.1μm lines and spaces of 0.55μm-thick resist (aspect ratio = 5.5) can be successfully delineated.
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