Abstract
In this paper, we discuss the use of broadband microwaves (MW) to characterize the thermal stability of organic and hybrid silicon-organic thin films meant for insulation applications in micro- and nanoelectronic devices. We take advantage of MW propagation characteristics to extract and examine the relationships between electrical properties and the chemistry of prototypical low-k materials. The impact of thermal anneal at modest temperatures is examined to shed light on the thermal-induced performance and reliability changes within the dielectric films. These changes are then correlated with the chemical changes in the films, and could provide basis for rational selection of organic dielectrics for integrated devices.
Highlights
In this paper, we discuss the use of broadband microwaves (MW) to characterize the thermal stability of organic and hybrid silicon-organic thin films meant for insulation applications in micro- and nanoelectronic devices
These extrinsic measurement quantities, which relate to the dielectric constant (k) and the thickness of the dielectric material, are evaluated assuming that the test devices are ideal,[14] and that any statistical variation is a consequence of the limited technological process control.[4]
The objective of this work is to shed some light on the thermal stability of prototypical emerging low-k dielectric films, as a function of material type and deposition methods, and to relate the thermally-induced changes in chemical properties that occur within the films
Summary
We discuss the use of broadband microwaves (MW) to characterize the thermal stability of organic and hybrid silicon-organic thin films meant for insulation applications in micro- and nanoelectronic devices. The design of low- and ultra-low dielectric constant materials involves balancing competing molecular properties.[6,7] The chemistry of these materials plays a crucial role in determining the performance and reliability of the emerging electronic devices, especially in low voltage devices.[8] In general, materials composed of molecules with low polarizabilities make better low-k materials These low polarizability molecules suffer from poor adhesion to surfaces because they are quite inert and do not form interfacial films to the target substrates, and, in addition, are mechanically too soft.[9] Based on materials research and engineering, porous hydrogen-rich amorphous carbon-doped organo-silicon-oxide low-k films (SiOC:H), with uniformly distributed micropores,[4] have emerged as the material of choice for most commercial back-end-of-line interconnect applications.[10] Better insights into the fundamental properties of the emerging dielectric are needed to address the performance and reliability gaps of advanced electronic devices.[11] Among the many vexing issues, there is a need to understand the physics of failure of these new classes of dielectrics including how they breakdown under thermal and electrical stress.[12].
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