Abstract
An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390–784 nm is dramatically suppressed from 21.0% to 1.9% after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226% was achieved at an emission angle of 20° on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence study presents a considerable omnidirectional luminescence enhancement.
Highlights
Silicon carbide (SiC), as the only compound semiconductor in group IV, has wide applications in high-temperature, high-power, and high-voltage electrical devices, because of its unique physical properties, such as excellent thermal conductivity and high breakdown field
Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390-784 nm is dramatically suppressed from 21.0 % to 1.9 % after introducing the pseudoperiodic nanostructures
A luminescence enhancement of 226 % was achieved at an emission angle of 20◦ on the fluorescent silicon carbide
Summary
Silicon carbide (SiC), as the only compound semiconductor in group IV, has wide applications in high-temperature, high-power, and high-voltage electrical devices, because of its unique physical properties, such as excellent thermal conductivity and high breakdown field. SiC is becoming an important material for optoelectronics devices It can be used as a suitable growth substrate for gallium nitride (GaN) which is currently the key material for high-efficiency visible [1,2,3,4,5] and ultraviolet [6, 7] light-emitting diodes (LEDs). SiC can be tailored to have a broad donor-acceptor-pair emission in the visible spectral range by introducing suitable dopants during the growth It exhibits high color rendering ability and long lifetime, which is much superior to the common wavelength-conversion materials like phosphors. A broadband light extraction improvement can be achieved by applying a stack of antireflection coatings with appropriate design [10, 11] Such material system is usually limited by the availability of materials with suitable refractive indices and thermal expansion coefficients. Pseudoperiodic ARS on the fluorescent SiC for omnidirectional luminescence enhancement over the entire visible spectral range has been demonstrated
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