Abstract

We fabricated the distributed Bragg reflectors (DBRs) with amorphous germanium (a-Ge) films consisted of the same materials at a center wavelength (λc) of 1.33 μm by the glancing angle deposition. Their optical reflectance properties were investigated in the infrared wavelength region of 1-1.9 μm at incident light angles (θ inc) of 8-70°, together with the theoretical analysis using a rigorous coupled-wave analysis simulation. The two alternating a-Ge films at the incident vapor flux angles of 0 and 75° were formed as the high and low refractive index materials, respectively. The a-Ge DBR with only 5 periods exhibited a normalized stop bandwidth (∆λ/λ c) of ~24.1%, maintaining high reflectance (R) values of > 99%. Even at a high θ inc of 70°, the ∆λ/λ c was ~21.9%, maintaining R values of > 85%. The a-Ge DBR with good uniformity was obtained over the area of a 2 inch Si wafer. The calculated reflectance results showed a similar tendency to the measured data.

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