Abstract
Abstract Broad beam ion implantation is a new technique which uses a mass separated broad ion beam. In the future, this beam may have a diameter of 200 or 300 mm. The ion beam is generated by a broad beam Kaufman-ion source followed by a radio-frequency ion mass filter. After the mass filter, the ions have an energy of only 0.3 keV and can be post-accelerated up to 40 keV. Boron trifluoride is used for boron ion implantation between 0.3 and 30 keV with ion doses between 3×10 12 and 10 15 cm −2 . Thermal wave analysis by the Photothermal-Heterodyne-Principle is applied to measure the implanted ion dose.
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