Abstract
A few years ago, we reported on the benefits of a micro-Raman analytical technique to determe the temperature of active, GaN-based, III-V devices developed by Martin Kuball et al at UK's University of Bristol. This method uses the phonon frequency dependency with temperature in micro-Raman spectra, to measure the temperature of sub-micron regions of an operating device, such as a FET or HEMT gate region. Where these regions are accessible to microscopic examination, micro-Raman spectra allow the device surface temperature to be estimated to within about five °C. The excitation source is a one-micron laser spot from a 488nm argon laser (3mW power). It provides insignificant heating of the device chips, which are transparent at this wavelength.
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