Bright up-conversion photoluminescence of Bi4−xErxTi3O12 ferroelectric thin films

Abstract

The up-conversion (UC) photoluminescence and ferroelectric properties of Bi4−xErxTi3O12 (BErT) thin films were studied in terms of annealing temperature and Er3+ doping concentration. The thin films were prepared by chemical solution deposition method. There are two green emission bands centered at 527 and 548 nm, and a red emission band centered at 663 nm in UC luminescence spectra measured under a 980 nm laser excitation at room temperature, which correspond to the radiative transitions from 2H11/2, 4S3/2, and 4F9/2 to 4I15/2, respectively. The quenching concentration of Er3+ ions for green emission was as high as 20 mol % for Bi3.2Er0.8Ti3O12 thin films. The large Er3+ quenching concentration and efficient energy transfer between two neighboring Er3+ ions result in the improved UC emission. The dependence of UC emission intensity on pumping power indicated a two-photon UC emission process in the thin films. The combination of UC emission and ferroelectricity was realized in the capacitors of Pt/Bi3.25Er0.75Ti3O12/Pt/TiO2/SiO2/Si. The UC photoluminescent BErT ferroelectric thin films could be potentially applied to integrated optoelectronic devices.