Abstract
The pure green emission with high external efficiency of 0.12% has been obtained in nitrogen free GaP LED grown by applying the optimum phosphorus pressure at a constant temperature solution growth. The high efficiency N-free LED has a p+n- structure and the peak emission wavelength is 5560 Å at room temperature. The minority carrier lifetime is 1.4 µsec. The crystalline quality has been improved under the optimum phosphorus pressure and the concentration of deep levels in GaP decreases. Therefore, the minority carrier lifetime becomes longer, and the high efficiency pure green GaP LEDs have been produced.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
