Breathing modes in few-layer MoTe2 activated by h-BN encapsulation

Abstract

The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to significantly improve their optical and electronic properties. However, it may be expected that the h-BN encapsulation may also affect the vibration properties of TMDs due to an atomically flat surface of h-BN layers. In order to study its effect on interlayer interactions in few-layer TMDs, we investigate low-energy Raman scattering spectra of bi- and trilayer MoTe2. Surprisingly, three breathing modes are observed in the Raman spectra of the structures deposited on or encapsulated in h-BN as compared to a single breathing mode for the flakes deposited on a SiO2/Si substrate. The shear mode is not affected by changing the MoTe2 environment. The emerged structure of breathing modes is ascribed to the apparent interaction between the MoTe2 layer and the bottom h-BN flake. The structure becomes visible due to a high-quality surface of the former flake. Consequently, the observed triple structure of breathing modes originates from the combination modes due to interlayer and layer–substrate interactions. Our results confirm that the h-BN encapsulation substantially affects the vibration properties of layered materials.