Abstract
It is shown that the breakdown voltage of silicon diodes fabricated by the “planar” process is lower than that of corresponding geometrically plane diodes because of the increased electric field intensity in the curved portion of “planar” junctions. Measured breakdown voltages of “planar” silicon diodes are shown to follow Armstrong's theory for cylindrical step p-n junctions over a wide range of variables indicating the absence of significant surface effects on breakdown voltages.
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