Abstract
In this paper, we discuss the breakdown characteristics of an LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) structure for the optimization of engineering parameters such as the gap between the DEEP N-WELL and the source region and the doping concentration of the N(ADJUST)-layer. The fabricated device exhibits the breakdown voltage (BVdss) over 110 V and the specific on-resistance as low as 2.20 mOmega cm2. The robust breakdown characteristics seem to be due to the migration of the location wherein maximum impact ionization occurs from the gate region to the drain side, which was confirmed by the numerical simulation which verifies that the maximum impact ionization rate of the proposed structure is 2.44 x 10(16) cm(-3) s(-1), while that of the conventional structure being 6.69 x 10(19) cm(-3) s(-1).
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