Abstract
Recently, avalanche breakdown phenomena have received considerable attention. This is due to the lower breakdown voltage in advanced bipolar junction transistors (BJTs), which result from the increased collector doping. Avalanche breakdown in BJTs is an old issue; however, it is still not well-understood. This paper reports on studies of the breakdown characteristics of emitter-base and collector-base junctions with the other terminal open or shorted to the base. This is fundamental for the understanding of current-voltage characteristics of Si BJTs operated in the breakdown condition. The study includes the phenomena of avalanche breakdown, punchthrough and avalanche-induced light emission.
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