Abstract
The breakdown processes at a weak spot in SiO2 film under pulse conditions were investigated with samples having 200 Å to 1450 Å thick SiO2 films. Three types of breakdowns were observed. Two were attributed to electric breakdown and the third to thermal breakdown. Electric breakdown becomes dominant with increasing SiO2 film thickness, especially over 1000 Å, and with decreasing temperature. Electric breakdown was distinguished from thermal breakdown by using pulse technique, and the thickness dependence of electric breakdown was found to be proportional to the square root of the SiO2 film thickness. In addition, the time lag in the initiation of breakdown after the application of a pulse voltage and the resistance of current path formed by electric breakdown were studied. It was revealed that the probability that the avalanche grows to a critical destruction size in the SiO2 film increases with increasing temperature.
Published Version
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